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| 3V, 2400 MHz MEDIUM POWER SI MMIC AMPLIFIER FEATURES * HIGH GAIN: 20 dB at 900 to 1500 MHz Typical * HIGH OUTPUT POWER: PSAT = +12.5 dBm at 900 MHz +11 dBm at 1500 MHz Gain, GS (dB) UPC2771T GAIN vs. FREQUENCY AND TEMPERATURE 24 TA = -40 C 22 * LOW BIAS VOLTAGE: 3.0 V Typical, 2.7 V Minimum * SUPER SMALL PACKAGE * TAPE AND REEL PACKAGING OPTION AVAILABLE 20 +85 C TA = +25 C TA = +85 C 18 16 DESCRIPTION The UPC2771T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a driver amplifier for digital cellular applications. Operating on a 3 volt supply, this IC is ideally suited for hand-held, portable designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. 14 +25 C -40 C VCC = 3.0 V 0.1 0.3 1.0 3.0 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C, ZL = ZS = 50 , VCC = 3.0 V) PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS fU P1dB PSAT NF RLIN RLOUT ISOL OIP3 Small Signal Gain, PARAMETERS AND CONDITIONS Circuit Current (no signal) f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900 MHz f = 1500 MHz f = 900, 902 MHz f = 1500, 1502 MHz UNITS mA dB dB GHz dBm dBm dBm dBm dB dB dB dB dB dB dB dB dBm dBm 10 10 6.5 5.5 25 25 19 17 1.7 +9 +7 MIN UPC2771T T06 TYP 36 21 20 2.1 +11.5 +9.5 +12.5 +11 6 6 14 14 9.5 8.5 30 30 +16 +13 MAX 45 24 23 Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 100 MHz) 1 dB Compressed Output Power, Saturated Output Power, Noise Figure, Input Return Loss, Output Return Loss, Isolation, SSB OutputThird Order Intercept Point 7.5 7.5 California Eastern Laboratories UPC2771T ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VCC ICC PIN PT TOP TSTG PARAMETERS Supply Voltage Total Supply Current Input Power Total Power Dissipation2 Operating Temperature Storage Temperature UNITS V mA dBm mW C C RATINGS 3.6 77.7 +13 280 -40 to +85 -55 to +150 6 50 IN 1000 pF 1 4 1000 pF 50 OUT L* 1000 pF TEST CIRCUIT VCC Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 X 50 X 1.6 mm epoxy glass PWB (TA = 85C). 2, 3, 5 RECOMMENDED OPERATING CONDITIONS SYMBOLS VCC TOP PARAMETERS Supply Voltage Operating Temperature UNITS MIN V C 2.7 -40 TYP MAX 3 +25 3.3 +85 * This device is tested using a bias tee with typical series inductance, L = 1000 nH. In circuit applications, L = 50 nH is satisfactory at 900 MHz, and L = 10 nH is satisfactory at 1500 MHz. TYPICAL PERFORMANCE CURVES (TA = 25C) CIRCUIT CURRENT vs. VOLTAGE 50 50 CIRCUIT CURRENT vs. TEMPERATURE Circuit Current, ICC (mA) Circuit Current, ICC (mA) 40 40 30 30 20 20 10 10 0 0 1 2 3 4 0 -60 -40 -20 0 20 40 60 80 100 Supply Voltage, VCC (V) Temperature (C) GAIN AND NOISE FIGURE vs. FREQUENCY AND VOLTAGE 24 VCC = 2.7V 22 20 VCC = 3.3V GS VCC = 3.0V VCC = 3.3V INPUT RETURN LOSS AND OUTPUT RETURN LOSS vs. FREQUENCY 0 VCC = 3.0V RLout Gain, GS (dB) 18 Noise Figure, NF (dB) 16 14 VCC = 3.3 V 12 10 NF 8 6 0.1 0.3 VCC = 2.7 V 7 VCC = 3.0 V Return Loss (dB) VCC = 3.0 V -10 -20 RLin -30 5 VCC = 2.7 V 3 1.0 3.0 -40 0.1 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) UPC2771T TYPICAL PERFORMANCE CURVES (TA = 25) ISOLATION vs. FREQUENCY 0 VCC = 3.0V 15 VCC = 3.3 V f = 900 MHz OUTPUT POWER vs. INPUT POWER AND VOLTAGE Output Power, POUT (dBm) -10 10 VCC = 2.7 V VCC = 3.0 V 5 Isolation, ISOL (dB) -20 -30 0 -40 -50 0.1 0.3 1.0 3.0 -5 -25 -20 -15 -10 -5 0 Frequency, f (GHz) Input Power, PIN (dBm) SATURATED OUTPUT POWER vs. FREQUENCY AND VOLTAGE Saturated Output Power, PO(SAT), (dBm) Pin = -3 dBm 15 VCC = 3.3 V SATURATED OUTPUT POWER vs. FREQUENCY AND TEMPERATURE Saturated Output Power, PO(SAT), (dBm) 17 Pin = -3 dBm 15 TA = +85C 13 TA = +25C 11 17 13 VCC = 3.0 V 11 VCC = 2.7 V TA = -40C 9 9 7 7 5 0.1 0.3 1.0 3.0 5 0.1 0.3 1.0 3.0 Frequency, f (GHz) Frequency, f (GHz) S11 vs. FREQUENCY (VCC = 3.0 V) S22 vs. FREQUENCY (VCC = 3.0 V) 0.9 GHz 1.5 GHz 1.9 GHz 0.1 1.9 GHz 0.1 GHz 0.9 GHz 1.5 GHz UPC2771T OUTLINE DIMENSIONS (Units in mm) LEAD CONNECTIONS (Top View) (Bottom View) UPC2771T PACKAGE OUTLINE T06 +0.2 2.8 -0.3 +0.2 1.5 -0.1 3 4 4 3 2.90.2 3 0.95 4 C2H 2 5 5 2 1.90.2 2 0.95 5 1 1 6 -0.05 0.3 +0.10 6 6 1 +0.2 1.1 -0.1 0.8 0 to 0.1 0.130.1 1. INPUT 2. GND 3. GND 4. OUTPUT 5. GND 6. VCC RECOMMENDED P.C.B. LAYOUT (Units in mm) EQUIVALENT CIRCUIT 3.10 VCC 3 4 0.95 OUT 2 5 IN 1 6 0.5 MIN 1.0 MIN 1.0 MIN Note: All dimensions are typical unless otherwise specified. ORDERING INFORMATION PART NUMBER UPC2771T-E3 Note: Embossed Tape, 8 mm wide. QTY 3K/Reel EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC DATA SUBJECT TO CHANGE WITHOUT NOTICE * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393/FAX (408) 988-0279 PRINTED IN USA ON RECYCLED PAPER 11/95 |
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